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SI7611DN-T1-GE3

Part No SI7611DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 18A 1212-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1980pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 9.3A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096183-SI7611DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7611DN-T1-GE3 CAD Model

Description

The Vishay SI7611DN-T1-GE3 is a P-channel MOSFET with a drain-source breakdown voltage of 40V and a continuous drain current of 18A @ 25°C.

  • Manufacturer: Vishay
  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 18A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Rds On: 25 mOhm @ 9.3A, 10V
  • Mounting: SMD (SMT)
  • Package: PowerPAK 1212-8
  • Power Dissipation: 3.7W (Ta) and 39W (Tc)
  • Temperature Range: -50°C to 150°C (TJ)
  • Application: Industrial Power Management

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3678 $54.7120
80+ $1.2812 $102.4960
125+ $1.2380 $154.7500
175+ $1.1514 $201.4950
230+ $1.1081 $254.8630
285+ $1.0648 $303.4680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,967 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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