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SI7617DN-T1-GE3

Part No SI7617DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 35A 1212-8 PPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 1800pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 12.3 mOhm @ 13.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 104380-SI7617DN-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7617DN-T1-GE3 CAD Model

Description

The Vishay SI7617DN-T1-GE3 is a P-channel MOSFET transistor with a drain-source breakdown voltage of 30V and continuous drain current of 35A (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 35A (Tc)
  • Maximum Rds On at Id,Vgs: 12.3 mOhm @ 13.9A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Package: PowerPAK 1212-8
  • Mounting Type: Surface Mount
  • Category: Discrete Semiconductor Products
  • Operating Temperature: -55°C to 150°C (TJ)
  • Manufacturer: Vishay
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4387 $50.4505
245+ $0.4109 $100.6705
380+ $0.3970 $150.8600
545+ $0.3693 $201.2685
705+ $0.3554 $250.5570
880+ $0.3415 $300.5200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 58,800 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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