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SI7629DN-T1-GE3

Part No SI7629DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 35A 1212-8 PPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 177nC @ 10V
Max Input Capacitance 5790pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096188-SI7629DN-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7629DN-T1-GE3 CAD Model

Description

The Vishay SI7629DN-T1-GE3 is a P-Channel MOSFET used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 35A @ 25°C
  • Maximum Rds On: 4.6 mOhm @ 20A @ 10V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 177nC @ 10V
  • Package: PowerPAK 1212-8
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6691 $60.2190
215+ $0.5491 $118.0565
330+ $0.5319 $175.5270
450+ $0.5148 $231.6600
585+ $0.4976 $291.0960
780+ $0.4461 $347.9580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,935 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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