The Vishay SI7682DP-T1-E3 MOSFET is a N-Channel polarity power transistor that can handle a maximum power dissipation of 5W at Ta and 27.5W at Tc.

• Polarity: N-Channel
• Power Dissipation: 5W @ Ta and 27.5W @ Tc
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 20A @ 25°C
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Maximum Gate Charge: 38nC @ 10V
• Maximum Rds On at Id,Vgs: 9 mOhm @ 20A, 10V
• Mounting: PowerPAK SO-8
• Dimension: PowerPAK SO-8
• Maximum Input Capacitance: 1595pF @ 15V
• Maximum Gate-Source Voltage: ±20V
• Category: Discrete Semiconductor Products
• Status: Obsolete (EOL)