The Vishay 064576-SI7812DN-T1-E3 is a N-Channel MOSFET component with a maximum power dissipation of 3.8W (Ta), 52W (Tc) and a drain-source breakdown voltage of 75V.

• Type: N-Channel MOSFET
• Maximum Power Dissipation: 3.8W (Ta), 52W (Tc)
• Drain-Source Breakdown Voltage: 75V
• Continuous Drain Current: 16A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Rds on at Id,Vgs: 37 mOhm @ 7.2A, 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Gate Charge: 24nC @ 10V
• Package: PowerPAK 1212-8
• Category: Discrete Semiconductor Products applications
• Applications: Industrial and Power Management fields.