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Same model may have multiple batches, images only for reference.
SI7818DN-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7818DN-T1-E3

Part No SI7818DN-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 2.2A 1212-8
Datasheet
SI7818DN-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 135 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 028667-SI7818DN-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7818DN-T1-E3 CAD Model

Description

The Vishay SI7818DN-T1-E3 is a MOSFET electronic component that is used in various applications.

  • Manufacturer: Vishay
  • Popularity Rating: medium
  • Ideal For: specific applications
  • Features: low power dissipation and a high continuous drain current @ 25°C
  • Quality: reliable and durable
  • Environment: can withstand harsh environments

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7594 $52.7820
70+ $1.4437 $101.0590
110+ $1.3985 $153.8350
150+ $1.3534 $203.0100
195+ $1.3083 $255.1185
260+ $1.1730 $304.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 69,783 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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