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Same model may have multiple batches, images only for reference.
SI7872DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7872DP-T1-GE3

Part No SI7872DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.4A PPAK SO-8
Datasheet
SI7872DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.4A
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11nC @ 4.5V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 097822-SI7872DP-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7872DP-T1-GE3 CAD Model

Description

The Vishay SI7872DP-T1-GE3 is a 2 N-Channel (Half Bridge) FET type with a logic level gate feature.

  • FET Type: 2 N-Channel (Half Bridge)
  • Gate Feature: Logic Level Gate
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6.4A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 7.5A, 10V
  • Package: PowerPAK SO-8 Dual
  • Maximum Power Dissipation: 1.4W

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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