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Same model may have multiple batches, images only for reference.
SI7882DP Vishay
Same model may have multiple batches, images only for reference.

SI7882DP

Part No SI7882DP
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 13A PPAK SO-8
Datasheet
SI7882DP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 30nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 17A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 322868-SI7882DP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7882DP CAD Model

Description

The Vishay 322868-SI7882DP is an N-channel MOSFET technology with a PowerPAK SO-8 case/package.

  • Case/Package: PowerPAK SO-8
  • Maximum Power Dissipation: 1.9W (Ta)
  • Continuous Drain Current @ 25°C: 13A (Ta)
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Max Gate Charge: 30nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 5.5 mOhm @ 17A, 4.5V
  • Drain-Source Breakdown Voltage: 12V
  • Maximum Gate-Source Voltage: ±8V
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3075 $58.8375
110+ $1.0730 $118.0300
170+ $1.0395 $176.7150
230+ $1.0060 $231.3800
300+ $0.9725 $291.7500
400+ $0.8720 $348.8000
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