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Same model may have multiple batches, images only for reference.
SI7925DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7925DN-T1-GE3

Part No SI7925DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.8A
Rds On (Max) @ Id, Vgs 42mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Power - Max 1.3W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
Base Product Number SI7925
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278470-SI7925DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7925DN-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7925DN-T1-GE3 is a dual P-channel MOSFET transistor array with a drain to source voltage (Vdss) of 12V and a continuous drain current (Id) of 4.8A at 25°C.

  • Drain to Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 4.8A @ 25°C
  • Maximum On-State Resistance (Rds On): 42mOhm @ 6.5A, 4.5V
  • Maximum Gate to Source Voltage Threshold (Vgs(th)): 1V @ 250μA
  • Maximum Power Rating: 1.3W
  • Gate Charge (Qg): 12nC @ 4.5V

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