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Same model may have multiple batches, images only for reference.
SI7948DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI7948DP-T1-GE3

Part No SI7948DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 3A PPAK SO-8
Datasheet
SI7948DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3A
Maximum Rds On at Id,Vgs 75 mOhm @ 4.6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 140833-SI7948DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7948DP-T1-GE3 CAD Model

Description

This discrete semiconductor product is a 2 N-Channel (Dual) FET with a logic level gate feature manufactured by Vishay.

  • Win Source Part Number: 140833-SI7948DP-T1-GE3
  • Package: PowerPAK SO-8 Dual
  • Maximum Power: 1.4W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 3A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge @ 10V: 20nC
  • Maximum Rds On @ 4.6A, 10V: 75 mOhm
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Operating Temperature Range: -55°C to 150°C (TJ)

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