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Same model may have multiple batches, images only for reference.
SI7958DP-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI7958DP-T1-GE3

Part No SI7958DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 7.2A PPAK SO-8
Datasheet
SI7958DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.2A
Maximum Rds On at Id,Vgs 16.5 mOhm @ 11.3A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 75nC @ 10V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 134803-SI7958DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI7958DP-T1-GE3 CAD Model

Description

This electronic component is a 2 N-Channel (Dual) FET from Vishay, with a part number of 134803-SI7958DP-T1-GE3.

  • Feature: Logic level gate
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 7.2A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge @ 10V: 75nC
  • Maximum Rds On @ 11.3A, 10V: 16.5 mOhm
  • Package: PowerPAK SO-8 Dual
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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Availability: 3,434 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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