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Same model may have multiple batches, images only for reference.
SI7980DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7980DP-T1-E3

Part No SI7980DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 8A PPAK SO-8
Datasheet
SI7980DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 22 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1010pF @ 10V
Maximum Power Dissipation 19.8W, 21.9W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 042625-SI7980DP-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI7980DP-T1-E3 CAD Model

Description

The SI7980DP-T1-E3 is a dual N-channel MOSFET manufactured by Vishay.

  • Design: High-performance power MOSFET
  • Maximum Continuous Drain Current: 8A
  • Maximum Rds On: 22mOhm
  • Package: PowerPAK SO-8 Dual
  • RoHS Compliant: True

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