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Same model may have multiple batches, images only for reference.
SI7994DP-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI7994DP-T1-GE3

Part No SI7994DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 60A PPAK SO-8
Datasheet
SI7994DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A
Maximum Rds On at Id,Vgs 5.6 mOhm @ 20A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 3500pF @ 15V
Maximum Power Dissipation 46W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8 Dual
Win Source Part Number 106525-SI7994DP-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI7994DP-T1-GE3 CAD Model

Description

The Vishay SI7994DP-T1-GE3 is a dual N-Channel MOSFET transistor that comes in a PowerPAK SO-8 Dual package.

  • Maximum Power Dissipation: 46W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25℃: 60A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge @ 10V: 80nC
  • Maximum Input Capacitance @ 15V: 3500pF
  • Maximum Rds On @ 20A and 10V: 5.6 mOhm

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $3.0164 $60.3280
47+ $2.4751 $116.3297
73+ $2.3977 $175.0321
100+ $2.3204 $232.0400
129+ $2.2430 $289.3470
173+ $2.0110 $347.9030
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Availability: 1,800 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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