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SIR826DP-T1-GE3 Real Image SIR826DP-T1-GE3 real image5526
Same model may have multiple batches, images only for reference.
SIR826DP-T1-GE3 Real Image SIR826DP-T1-GE3 real image5526
SIR826DP-T1-GE3 Real Image SIR826DP-T1-GE3 real image5526
Same model may have multiple batches, images only for reference.

SIR826DP-T1-GE3

Part No SIR826DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 60A PPAK SO-8
Datasheet
SIR826DP-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 2900pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 4.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 138615-SIR826DP-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIR826DP-T1-GE3 CAD Model

Description

The SIR826DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay.

  • Maximum Voltage Rating: 80V
  • Maximum Continuous Drain Current: 60A
  • Operating Temperature Range: -55°C to 150°C

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Quantity Unit Price Ext. Price
30+ $2.1887 $65.6610
65+ $1.7959 $116.7335
100+ $1.7398 $173.9800
140+ $1.6837 $235.7180
180+ $1.6276 $292.9680
240+ $1.4592 $350.2080
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Availability: 30,622 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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