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Same model may have multiple batches, images only for reference.
SI8467DB-T2-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8467DB-T2-E1

Part No SI8467DB-T2-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V MICROFOOT
Datasheet
SI8467DB-T2-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 475pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc)
Maximum Rds On at Id,Vgs 73 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-Microfoot
Dimension 4-XFBGA, CSPBGA
Win Source Part Number 1096289-SI8467DB-T2-E1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI8467DB-T2-E1 CAD Model

Description

The Vishay MOSFET 1096289-SI8467DB-T2-E1 is a P-channel MOSFET with a drain-source breakdown voltage of 20V.

  • Manufacturer: Vishay
  • Type: P-Channel MOSFET
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 73 mOhm @ 1A, 4.5V
  • Power Dissipation (max): 780mW (Ta), 1.8W (Tc)
  • Drive Voltage (max Rds On, Min Rds On): 2.5V, 4.5V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Gate Charge: 21nC @ 10V
  • Maximum Input Capacitance: 475pF @ 10V
  • Technology: SMD (SMT)
  • Package: 4-microfoot
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Sufficient
  • Packaging: Reel - TR

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