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Same model may have multiple batches, images only for reference.
SI8475EDB-T1-E1 Real Image
Same model may have multiple batches, images only for reference.

SI8475EDB-T1-E1

Part No SI8475EDB-T1-E1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4MICROFOOT  /  P-Channel 20 V 4.9A (Ta) 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot
Datasheet
SI8475EDB-T1-E1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 32mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Vgs (Max) ±12V
Power Dissipation (Max) 1.1W (Ta), 2.7W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 4-Microfoot
Package / Case 4-XFBGA, CSPBGA
Base Product Number SI8475
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SI8475EDB-T1-E1CT,SI8475EDB-T1-E1TR,SI8475EDBT1E1,SI8475EDB-T1-E1DKR
Standard Package 3,000
Win Source Part Number 1146748-SI8475EDB-T1-E1
Ultra Librarian 3D Model Ultra Librarian SI8475EDB-T1-E1 CAD Model

Description

The SI8475EDB-T1-E1 MOSFET is a high-performance P-channel MOSFET that is designed to deliver reliable performance in a variety of applications.

  • Category: Discrete Semiconductor Products
  • Suitable for: Wide range of electronic devices
  • Vdss: 20 V
  • Id: 4.9A @ 25°C
  • Mounting Type: SMD (SMT)
  • Package: 4-XFBGA, CSPBGA
  • Rds On: 32mOhm @ 1A, 4.5V
  • Drive Voltage: 2.5V, 4.5V

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