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SI9407DY-T1-E3

Part No SI9407DY-T1-E3
Manufacturer Vishay
Catalog OEM Parts ( S )
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 965475-SI9407DY-T1-E3
Categories OEM Parts( S )
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI9407DY-T1-E3 CAD Model

Description

The SI9407DY-T1-E3 is a P-Channel MOSFET from Vishay Siliconix, designed for load switching and power management applications. This device features a low on-resistance, which minimizes conduction losses and enhances overall system efficiency. The 'T1' suffix indicates that it's taped and reeled for automated assembly, while 'E3' denotes compliance with RoHS standards, ensuring environmental friendliness.

Applications

  • Load switching in portable devices
  • Power management in battery-powered systems
  • DC-DC converters
  • Solid-state relays
  • High-side switching applications

Features

  • Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
  • Logic-Level Gate Drive: Allows direct interfacing with low-voltage logic circuits.
  • TrenchFET® Power MOSFET Technology: Provides high cell density for low on-resistance.
  • 100% Rg Tested: Ensures consistent and reliable gate charge characteristics.
  • RoHS Compliant: Meets environmental regulations for hazardous substances.

Benefits

  • Improved System Efficiency: Low on-resistance reduces power dissipation and extends battery life.
  • Simplified Circuit Design: Logic-level gate drive allows for direct microcontroller interface.
  • Enhanced Thermal Performance: Efficient heat dissipation ensures reliable operation.
  • Increased Reliability: Rugged design ensures stable performance under various operating conditions.
  • Environmentally Friendly: RoHS compliance ensures minimal environmental impact.

Additional Details

The SI9407DY-T1-E3 is supplied in a SO-8 package. It features a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) of -5.8A. The on-resistance (RDS(on)) is typically 0.028 Ohms at a gate-source voltage (VGS) of -10V and 0.045 Ohms at a gate-source voltage (VGS) of -4.5V. The device is designed to operate over a temperature range of -55°C to +150°C. Its low gate charge and fast switching speed make it suitable for high-frequency applications.

This MOSFET is particularly well-suited for portable devices and battery-powered systems where efficiency and size are critical. Its low on-resistance helps to minimize power losses, while its compact SO-8 package saves valuable board space.

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