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Same model may have multiple batches, images only for reference.
SI9933CDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI9933CDY-T1-E3

Part No SI9933CDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4A 8SOIC
Datasheet
SI9933CDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 58 mOhm @ 4.8A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 665pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096356-SI9933CDY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI9933CDY-T1-E3 CAD Model

Description

The SI9933CDY-T1-E3 is a 2 P-Channel (Dual) FET designed for discrete semiconductor products.

  • Manufacturer: Vishay
  • Package: 8-SO
  • FET Feature: logic level gate
  • Operating Temperature Range: -50°C to 150°C (TJ)
  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4A
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 665pF @ 10V
  • Maximum Rds On @ Id,Vgs: 58 mOhm @ 4.8A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
385+ $0.1513 $58.2505
930+ $0.1247 $115.9710
1,430+ $0.1213 $173.4590
1,985+ $0.1167 $231.6495
2,555+ $0.1132 $289.2260
3,410+ $0.1016 $346.4560
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Availability: 39,000 pieces
MOQ: 385 pcs
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