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Same model may have multiple batches, images only for reference.
RDN150N20FU6 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RDN150N20FU6

Part No RDN150N20FU6
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 15A TO-220FN
Datasheet
RDN150N20FU6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 1224pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FN
Dimension TO-220-3 Full Pack
Win Source Part Number 1091678-RDN150N20FU6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RDN150N20FU6 CAD Model

Description

The Rohm Semiconductor 1091678-RDN150N20FU6 is a N-channel MOSFET with a maximum power dissipation of 40W (Tc).

  • Status: Not for new designs
  • Popularity: Medium
  • Package: TO-220FN
  • Dimension: TO-220-3 Full Pack
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 15A (Ta) @ 25°C
  • Max Gate Charge: 64nC @ 10V
  • Maximum Rds On: 160 mOhm @ 7.5A, 10V

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