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Same model may have multiple batches, images only for reference.
SIA400EDJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA400EDJ-T1-GE3

Part No SIA400EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A SC-70
Datasheet
SIA400EDJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1265pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 11A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096363-SIA400EDJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA400EDJ-T1-GE3 CAD Model

Description

The 1096363-SIA400EDJ-T1-GE3 is an N-channel MOSFET product from Vishay with a power dissipation of 3.5W (Ta) and 19.2W (Tc).

  • Mounting: SMD (SMT)
  • Packaging: Reel-TR
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V and 4.5V, respectively
  • Category: Discrete semiconductor products
  • Popularity: Medium
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Input Capacitance: 1265pF @ 15V
  • Maximum Rds On @ Id, Vgs: 19 mOhm @ 11A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: PowerPAK SC-70-6 Single

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Quantity Unit Price Ext. Price
14+ $3.7836 $52.9704
33+ $3.1045 $102.4485
50+ $3.0074 $150.3700
69+ $2.9104 $200.8176
89+ $2.8134 $250.3926
119+ $2.5224 $300.1656
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