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Same model may have multiple batches, images only for reference.
SIA411DJ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIA411DJ-T1-E3

Part No SIA411DJ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 12A SC70-6 / Trans MOSFET P-CH 20V 12A 6-Pin PowerPAK SC-70 EP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type P
Technology MOSFET
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Vgs(th) (Maximum) @ Id 1V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 38nC @ 8V
Input Capacitance (Ciss) (Maximum) @ Vds 1200pF @ 10V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 3.5W (Ta), 19W (Tc)
Rds On (Maximum) @ Id, Vgs 30 mOhm @ 5.9A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PowerPAK SC-70-6 Single
Package PowerPAK SC-70-6
Win Source Part Number 794390-SIA411DJ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Family Name SiA411DJ
Introduction Date March 11, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SIA411DJ-T1-E3 CAD Model

Description

The SiA411DJ-T1-E3 is a Vishay Siliconix MOSFET.

  • Series: TrenchFET
  • Package: PowerPAK SC-70-6
  • Continuous Drain Current (Id) @ 25°C: 12A (Tc)
  • Status: Obsolete (EOL)
  • Mounting: SMD
  • Technology: MOSFET
  • Channel Type: P
  • Drain Source Voltage: 20V
  • Gate Charge (Qg) @ Maximum Vgs: 38nC @ 8V
  • Input Capacitance (Ciss) @ Maximum Vds: 1200pF @ 10V
  • Operating Temperature Range (TJ): -55°C to 150°C

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