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Same model may have multiple batches, images only for reference.
SIA436DJ-T4-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA436DJ-T4-GE3

Part No SIA436DJ-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA436DJ-T4-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 15.7A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.2 nC @ 5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 1508 pF @ 4 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
Base Product Number SIA436
Other Names 742-SIA436DJ-T4-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277530-SIA436DJ-T4-GE3
Ultra Librarian 3D Model Ultra Librarian SIA436DJ-T4-GE3 CAD Model

Description

The Vishay Siliconix TrenchFET® series part number 1277530-SIA436DJ-T4-GE3 is an N-channel MOSFET (Metal Oxide) FET.

  • Drain-to-Source Voltage: 8V
  • Power: 3.5W (Ta) and 19W (Tc)
  • Rds On (Max): 9.4mOhm @ 15.7A, 4.5V
  • Vgs(th) (Max): 800mV @ 250µA
  • Package: Tape and Reel
  • Package Size: PowerPAK® SC-70-6
  • Gate Charge: 25.2 nC @ 5 V
  • Input Capacitance: 1508 pF @ 4 V
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • Category: discrete semiconductor products - transistors - FETs, MOSFETs - Single

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