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SIA461DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA461DJ-T1-GE3

Part No SIA461DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 12A SC70-6
Datasheet
SIA461DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 45nC @ 8V
Max Input Capacitance 1300pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.4W (Ta), 17.9W (Tc)
Maximum Rds On at Id,Vgs 33 mOhm @ 5.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Single
Dimension PowerPAK SC-70-6
Win Source Part Number 1096379-SIA461DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA461DJ-T1-GE3 CAD Model

Description

The Vishay SIA461DJ-T1-GE3 is a P-channel MOSFET integrated circuit designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Power Dissipation: 3.4W (Ta) and 17.9W (Tc)
  • Drive Voltage: 1.8V (Max Rds On) and 4.5V (Min Rds On)
  • Package Type: PowerPAK SC-70-6 Single
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 33 mOhm @ 5.2A, 4.5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.2195 $64.7525
720+ $0.1802 $129.7440
1,115+ $0.1745 $194.5675
1,535+ $0.1689 $259.2615
1,985+ $0.1633 $324.1505
2,655+ $0.1464 $388.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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