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SIA467EDJ-T1-GE3

Part No SIA467EDJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2520 pF @ 6 V
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Temperature Range - Operating -50°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
Base Product Number SIA467
Other Names SIA467EDJ-T1-GE3CT,SIA467EDJ-T1-GE3DKR,SIA467EDJ-T1-GE3TR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277549-SIA467EDJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA467EDJ-T1-GE3 CAD Model

Description

The SIA467EDJ-T1-GE3 MOSFET from Vishay Siliconix is a P-Channel FET with a drain to source voltage (Vdss) of 12V and a continuous drain current (Id) of 31A @ 25°C.

  • Maximum On-Resistance (Rds On): 13mOhm @ 5A and 4.5V gate-source voltage (Vgs)
  • Gate Charge (Qg): 72nC @ 8Vgs
  • Input Capacitance (Ciss): 2520pF @ 6Vds
  • Package: PowerPAK SC-70-6 package
  • Maximum Power Dissipation: 3.5W @ Ta and 19W @ Tc
  • Operating Temperature Range: -50°C to 150°C (TJ)

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