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Same model may have multiple batches, images only for reference.
SIA511DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA511DJ-T1-GE3

Part No SIA511DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 6V
Power - Max 6.5W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA511
Other Names SIA511DJ-T1-GE3TR,SIA511DJT1GE3,SIA511DJ-T1-GE3CT,SIA511DJ-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278482-SIA511DJ-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIA511DJ-T1-GE3 CAD Model

Description

The Vishay Siliconix SIA511DJ-T1-GE3 is a N and P-Channel MOSFET transistor from Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Maximum Power: 6.5W
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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