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SIA810DJ-T1-GE3

Name: SIA810DJ-T1-GE3
Brand: Vishay
SKU: 1277699
Availability: InStock
Rating: 4.93 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIA810DJ-T1-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIA810DJ-T1-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	LITTLE FOOT®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	53mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.5 nC @ 8 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.9W (Ta), 6.5W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PowerPAK® SC-70-6 Dual
Package / Case	PowerPAK® SC-70-6 Dual
Base Product Number	SIA810
Standard Package	3,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277699-SIA810DJ-T1-GE3
Ultra Librarian 3D Model	Ultra Librarian SIA810DJ-T1-GE3 CAD Model

Alternative Products

Description

The 1277699-SIA810DJ-T1-GE3 is an N-channel MOSFET transistor from Vishay Siliconix.

Drain to Source Voltage: 20 V
Continuous Drain Current: 4.5A (Tc)
Maximum Rds On: 53mOhm @ 3.7A, 4.5V
Gate Charge: 11.5 nC @ 8 V
Feature: Schottky Diode (isolated)
Maximum Vgs(th): 1V @ 250µA
Package: PowerPAK® SC-70-6 Dual
Power Dissipation: 1.9W (Ta), 6.5W (Tc)
Input Capacitance: 400 pF @ 10 V
Maximum Vgs: ±8V
Temperature Range: -55°C ~ 150°C (TJ)
ECCN: EAR99
MSL Level: 1 (Unlimited)

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SIA810DJ-T1-GE3

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