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Same model may have multiple batches, images only for reference.
SIA911DJ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIA911DJ-T1-E3

Part No SIA911DJ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.5A SC70-6
Datasheet
SIA911DJ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 94 mOhm @ 2.8A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12.8nC @ 8V
Max Input Capacitance 355pF @ 10V
Maximum Power Dissipation 6.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 126714-SIA911DJ-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIA911DJ-T1-E3 CAD Model

Description

The Vishay SIA911DJ-T1-E3 is a 2 P-Channel (Dual) standard FET designed for discrete semiconductor products.

  • Maximum Power Dissipation: 6.5W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Package: PowerPAK SC-70-6 Dual
  • Maximum Rds On: 94 mOhm @ 2.8A, 4.5V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5573 $58.5165
255+ $0.4573 $116.6115
395+ $0.4431 $175.0245
540+ $0.4287 $231.4980
700+ $0.4144 $290.0800
935+ $0.3716 $347.4460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 92,470 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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