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Same model may have multiple batches, images only for reference.
SIA911DJ-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIA911DJ-T1-GE3

Part No SIA911DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.5A SC70-6
Datasheet
SIA911DJ-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 94 mOhm @ 2.8A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 12.8nC @ 8V
Max Input Capacitance 355pF @ 10V
Maximum Power Dissipation 6.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 064631-SIA911DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA911DJ-T1-GE3 CAD Model

Description

The Vishay 064631-SIA911DJ-T1-GE3 is a dual 2 P-Channel FET with a standard feature.

  • Maximum Power Dissipation: 6.5W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 4.5A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 12.8nC @ 8V
  • Maximum Input Capacitance: 355pF @ 10V
  • Maximum Rds On at Id, Vgs: 94 mOhm @ 2.8A, 4.5V
  • Case/Package: PowerPAK SC-70-6 Dual
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4798 $59.9750
295+ $0.3938 $116.1710
455+ $0.3814 $173.5370
630+ $0.3691 $232.5330
810+ $0.3568 $289.0080
1,085+ $0.3199 $347.0915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,930 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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