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Same model may have multiple batches, images only for reference.
SIA915DJ-T4-GE3
Same model may have multiple batches, images only for reference.

SIA915DJ-T4-GE3

Part No SIA915DJ-T4-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIA915DJ-T4-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs 87mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 275pF @ 15V
Power - Max 1.9W (Ta), 6.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Base Product Number SIA915
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278459-SIA915DJ-T4-GE3
Ultra Librarian 3D Model Ultra Librarian SIA915DJ-T4-GE3 CAD Model

Description

The Vishay Siliconix SIA915DJ-T4-GE3 is an obsolete electronic component used in discrete semiconductor products.

  • FET Type: 2 P-Channel (Dual)
  • Power - Max: 1.9W (Ta), 6.5W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V

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