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SIA929DJ-T1-GE3

Part No SIA929DJ-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 4.5A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.5A (Tc)
Maximum Rds On at Id,Vgs 64 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 575pF @ 15V
Maximum Power Dissipation 7.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-70-6 Dual
Win Source Part Number 1096389-SIA929DJ-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIA929DJ-T1-GE3 CAD Model

Description

The Vishay SIA929DJ-T1-GE3 is a dual P-channel FET that has a logic level gate feature.

  • Channel Type: Dual P-Channel
  • Feature: Logic Level Gate
  • Suitable For: Discrete Semiconductor Products
  • Maximum Power Dissipation: 7.8W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.5A (Tc)
  • Gate-Source Threshold Voltage: 1.1V @ 250μA
  • Maximum Gate Charge: 21nC @ 10V
  • Maximum Input Capacitance: 575pF @ 15V
  • Maximum Rds On @ Id,Vgs: 64 mOhm @ 3A, 10V
  • Packaging: PowerPAK SC-70-6 Dual
  • ECCN: EAR99
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3714 $59.4240
380+ $0.3048 $115.8240
590+ $0.2954 $174.2860
810+ $0.2857 $231.4170
1,050+ $0.2763 $290.1150
1,400+ $0.2476 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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