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Same model may have multiple batches, images only for reference.
SIB4316EDK-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIB4316EDK-T1-GE3

Part No SIB4316EDK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 30-V (D-S) MOSFET POWE / N-Channel 30 V 4.5A (Ta), 6A (Tc) 1.9W (Ta), 10W (Tc) Surface Mount PowerPAK® SC-75-6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 57mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±12V
Power Dissipation (Max) 1.9W (Ta), 10W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIB4316EDK-T1-GE3TR,742-SIB4316EDK-T1-GE3DKR,742-SIB4316EDK-T1-GE3CT
Standard Package 3,000
Win Source Part Number 959617-SIB4316EDK-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIB4316EDK-T1-GE3 CAD Model

Description

The Vishay Siliconix SIB4316EDK-T1-GE3 is an N-channel MOSFET with a maximum drain to source voltage rating of 30V and a continuous drain current of 4.5A (Ta) and 6A (Tc).

  • Channel Type: N-channel
  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 4.5A (Ta) and 6A (Tc)
  • Maximum On-Resistance: 57mOhm @ 4A and 10V gate-source voltage
  • Mounting Type: Surface Mountable
  • Package Size: PowerPAK® SC-75-6
  • Gate Charge: 12nC @ 10V gate-source voltage

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