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SIB452DK-T1-GE3

Part No SIB452DK-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 190V 1.5A SC75-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 190V
Continuous Drain Current at 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 6.5nC @ 10V
Max Input Capacitance 135pF @ 50V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Maximum Rds On at Id,Vgs 2.4 Ohm @ 500mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SC-75-6L Single
Dimension PowerPAK SC-75-6L
Win Source Part Number 028736-SIB452DK-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIB452DK-T1-GE3 CAD Model

Description

The Vishay 028736-SIB452DK-T1-GE3 is a N-channel MOSFET with a drain-source breakdown voltage of 190V and a continuous drain current of 1.5A (Tc).

  • Maximum Rds On @ Id, Vgs: 2.4 Ohm @ 500mA, 4.5V
  • Maximum Gate-Source Voltage: ±16V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 6.5nC @ 10V
  • Maximum Input Capacitance: 135pF @ 50V
  • Power Dissipation: 2.4W (Ta), 13W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: high popularity

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6343 $60.2585
225+ $0.5206 $117.1350
345+ $0.5043 $173.9835
475+ $0.4880 $231.8000
615+ $0.4717 $290.0955
820+ $0.4230 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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