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Same model may have multiple batches, images only for reference.
SIB911DK-T1-E3
Same model may have multiple batches, images only for reference.

SIB911DK-T1-E3

Part No SIB911DK-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Max) @ Id, Vgs 295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 115pF @ 10V
Power - Max 3.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® SC-75-6L Dual
Supplier Device Package PowerPAK® SC-75-6L Dual
Base Product Number SIB911
Other Names SIB911DK-T1-E3CT,SIB911DK-T1-E3TR,SIB911DK-T1-E3DKR,SIB911DKT1E3
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278483-SIB911DK-T1-E3
Ultra Librarian 3D Model Ultra Librarian SIB911DK-T1-E3 CAD Model

Description

The Vishay TrenchFET® series MOSFET is designed for use in a variety of applications.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 2.6A
  • Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
  • Operating Temperature Range: -55°C to 150°C

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