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Same model may have multiple batches, images only for reference.
SIE822DF-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIE822DF-T1-GE3

Part No SIE822DF-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIE822DF-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 10 V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 10-PolarPAK® (S)
Package / Case 10-PolarPAK® (S)
Base Product Number SIE822
Other Names SIE822DF-T1-GE3CT,SIE822DF-T1-GE3TR,SIE822DF-T1-GE3DKR,SIE822DFT1GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277592-SIE822DF-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIE822DF-T1-GE3 CAD Model

Description

The Vishay Siliconix SIE822DF-T1-GE3 is a high-quality MOSFET transistor that is part of the TrenchFET® series.

  • Win Source Part Number: 1277592-SIE822DF-T1-GE3
  • Voltage Rating: 20V
  • Current Rating: 50A (Tc)
  • Rds On: 3.4mOhm @ 18.3A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Maximum Power Dissipation: 5.2W (Ta), 104W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)

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