The Vishay Siliconix SIE836DF-T1-GE3 is a MOSFET (Metal Oxide) transistor.

• Drain to source voltage (Vdss): 200 V
• Current - continuous drain (Id) @ 25°C: 18.3A (Tc)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 4.1A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Power dissipation (Max): 5.2W (Ta), 104W (Tc)
• Gate charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
• Input capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
• Type: N-Channel FET
• Mounted on: SMD (SMT) package
• Package / case: 10-PolarPAK® (SH)
• Status: obsolete
• Categorized under: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
• Part of: TrenchFET® series
• Drive voltage (Max Rds On, Min Rds On): 10V