EN
  • EN
  • DE

SIE860DF-T1-E3

Part No SIE860DF-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 60A POLARPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 4500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Maximum Rds On at Id,Vgs 2.1 mOhm @ 21.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 10-PolarPAK (M)
Dimension 10-PolarPAK (M)
Win Source Part Number 042629-SIE860DF-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIE860DF-T1-E3 CAD Model

Description

The Vishay SIE860DF-T1-E3 is a dual N-Channel 30 V (VDS) MOSFET in a PowerPAK® SO-8 single package. These devices are designed to minimize the on-state resistance (RDS(on)) while maintaining superior switching performance for high efficiency power management applications.

Applications

  • Synchronous Rectification: Used in synchronous rectification circuits in power supplies and DC-DC converters, improving efficiency by replacing diodes with MOSFETs.
  • Load Switching: Employed as load switches for controlling power to various components or subsystems in electronic devices.
  • Power Management in Portable Devices: Suitable for power management in smartphones, tablets, and laptops due to its compact size and high efficiency.
  • DC-DC Conversion: Found in DC-DC converters for voltage regulation and power conversion in a wide range of electronic devices.
  • Battery Management Systems (BMS): Can be integrated into BMS for battery charging and discharging control.

Features

  • Low On-State Resistance (RDS(on)): Minimizes power loss and improves efficiency. With an RDS(on) as low as 4.5 mΩ at VGS = 10 V, the device reduces heat generation and maximizes power delivery.
  • High-Density Cell Design: Utilizes an advanced trench MOSFET technology for optimal power density and switching performance.
  • Compact PowerPAK® SO-8 Package: Space-saving design for high-density circuit boards.
  • Lead (Pb)-free and Halogen-free: Compliant with environmental regulations.
  • 30V Drain-Source Voltage (VDS): Suitable for a variety of low-voltage applications.

Benefits

  • Increased Efficiency: Low RDS(on) reduces power losses, leading to higher efficiency in power conversion circuits.
  • Reduced Heat Dissipation: Lower on-resistance results in less heat generation, improving thermal management and system reliability.
  • Smaller Footprint: The PowerPAK® SO-8 package enables compact designs, saving valuable board space.
  • Enhanced System Reliability: Robust design ensures reliable operation in demanding applications.
  • Environmentally Friendly: Lead-free and halogen-free construction meets environmental standards.

Additional Details

The SIE860DF-T1-E3 from Vishay operates effectively within a temperature range of -55°C to +150°C, making it suitable for various environmental conditions. The gate threshold voltage (VGS(th)) is typically around 2.0 V, ensuring compatibility with standard logic-level gate drives. This MOSFET is designed for optimal performance in high-frequency switching applications, providing fast switching speeds and low gate charge.

The PowerPAK® SO-8 package offers excellent thermal performance, allowing the device to handle high current levels without overheating. The dual N-Channel configuration provides flexibility in circuit design, enabling the use of this MOSFET in a wide range of topologies.

Overall, the Vishay SIE860DF-T1-E3 is a high-performance, efficient, and compact MOSFET suitable for a wide range of power management applications. Its low on-state resistance, excellent switching characteristics, and robust design make it an ideal choice for synchronous rectification, load switching, and DC-DC conversion.

You May Also Be Interested in

STMicroelectronics
MOSFET N-CH 1000V 6.5A TO220FP
Lowest to $3.9201
IXYS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
Lowest to $32.6415
Infineon Technologies
MOSFET N-CH 100V 8.3A 8-SOIC
Lowest to $0.5419
IXYS
Polar HiPerFET Power MOSFET
Lowest to $5.1136
STMicroelectronics
MOSFET N-CH 600V 4.6A TO-220FP
Need more? Email Us
STMicroelectronics
MOSFET N-CH 1KV 3.5A TO220FP
Need more? Email Us
STMicroelectronics
MOSFET N-CH 500V 5A TO-220FP
Need more? Email Us
STMicroelectronics
MOSFET N-CH 900V 8A TO-220FP
Lowest to $3.8577
STMicroelectronics
MOSFET N-CH 500V 9A TO220FP
Lowest to $33.1300

Top Sellers

Bosch Sensortec
ACCELEROMETER 16LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $15.1412
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $5.4647
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $4.1579
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6155
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $6.0587
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.3444
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.7805
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $1.6632
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.9204
FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.5143
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.7805
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0357
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess