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Same model may have multiple batches, images only for reference.
SIF902EDZ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SIF902EDZ-T1-E3

Part No SIF902EDZ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 7A 6-POWERPAK
Datasheet
SIF902EDZ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 22 mOhm @ 7A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 14nC @ 4.5V
Maximum Power Dissipation 1.6W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK (2x5)
Win Source Part Number 1096403-SIF902EDZ-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIF902EDZ-T1-E3 CAD Model

Description

The SIF902EDZ-T1-E3 is a 2 N-Channel (Dual) Common Drain FET from Vishay with a logic level gate.

  • Status: no longer in production
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PowerPAK (2x5)
  • Mounting: SMD (SMT) technology
  • Maximum Power Dissipation: 1.6W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 7A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Max Gate Charge: 14nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 7A, 4.5V
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9436 $61.3340
150+ $0.7742 $116.1300
235+ $0.7501 $176.2735
320+ $0.7258 $232.2560
415+ $0.7017 $291.2055
555+ $0.6290 $349.0950
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Availability: 10,900 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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