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SIHA14N60E-E3

Name: SIHA14N60E-E3
Brand: Vishay
SKU: 1277738
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	SIHA14N60E-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHA14N60E-E3 Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	E
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	64 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1205 pF @ 100 V
Power Dissipation (Max)	147W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack
Base Product Number	SIHA14
Standard Package	1,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277738-SIHA14N60E-E3
Ultra Librarian 3D Model	Ultra Librarian SIHA14N60E-E3 CAD Model

Alternative Products

Description

The SIHA14N60E-E3 is an N-channel MOSFET transistor from Vishay Siliconix.

Package: TO-220-3 Full Pack
Drain to Source Voltage: 600V
Continuous Drain Current: 13A @ 25°C
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Maximum Power Dissipation: 147W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Operating Temperature Range: -55°C to 150°C (TJ)

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