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Same model may have multiple batches, images only for reference.
SIHA25N50E-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHA25N50E-E3

Part No SIHA25N50E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 26A TO-220FP
Datasheet
SIHA25N50E-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 1980pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 145 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096407-SIHA25N50E-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHA25N50E-E3 CAD Model

Description

The Vishay SIHA25N50E-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current of 26A @ 25°C.

  • Maximum Rds On @ Id, Vgs: 145 mOhm @ 12A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 1980pF @ 100V
  • Maximum Gate Charge: 86nC @ 10V
  • Power Dissipation: 35W (Tc)
  • Drive Voltage: 10V
  • Mounting Type: through hole
  • Package: TO-220 Full Pack
  • Ideal for: use in discrete semiconductor products

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