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SIHB22N60E-E3

Part No SIHB22N60E-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 1920pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 227W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 042630-SIHB22N60E-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHB22N60E-E3 CAD Model

Description

The Vishay SIHB22N60E-E3 is an N-channel MOSFET transistor that is used for switching and amplifying electronic signals.

  • Drain-Source Breakdown Voltage: 600V
  • Maximum Rds On: 180 mOhm @ 11A, 10V
  • Drive Voltage: 10V
  • Power Dissipation (Tc): 227W
  • Package: D2PAK
  • Operating Temperature Range (TJ): -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.5867 $60.9739
40+ $2.9429 $117.7160
61+ $2.8510 $173.9110
84+ $2.7590 $231.7560
109+ $2.6670 $290.7030
145+ $2.3911 $346.7095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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