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SIHD6N65ET4-GE3

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SIHD6N65ET4-GE3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SIHD6N65ET4-GE3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Vishay Siliconix
Series	E
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	820 pF @ 100 V
Power Dissipation (Max)	78W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	SIHD6
Standard Package	3,000
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1277765-SIHD6N65ET4-GE3
Ultra Librarian 3D Model	Ultra Librarian SIHD6N65ET4-GE3 CAD Model

Alternative Products

Description

The Vishay Siliconix SIHD6N65ET4-GE3 is an N-channel MOSFET transistor.

Drain to Source Voltage: 650 V
Continuous Drain Current: 7A @ 25 °C
Low Rds On: 600mOhm @ 3A and 10V
Suitability: Suitable for various applications such as power supplies, motor control, and lighting
Popularity: Low popularity in the market with a 49% chance of counterfeit products

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