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Same model may have multiple batches, images only for reference.
SIHF12N50C-E3 Vishay
Same model may have multiple batches, images only for reference.

SIHF12N50C-E3

Part No SIHF12N50C-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO-220
Datasheet
SIHF12N50C-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1375pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 36W (Tc)
Maximum Rds On at Id,Vgs 555 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096418-SIHF12N50C-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHF12N50C-E3 CAD Model

Description

The SIHF12N50C-E3 electronic component is a MOSFET technology with N-channel polarity, manufactured by Vishay.

  • Manufacturer: Vishay
  • Technology: MOSFET
  • Channel Polarity: N-channel
  • Case/Package: TO-220 Full Pack
  • Maximum Power Dissipation: 36W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 12A (Tc)
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On @ Id,Vgs: 555 mOhm @ 4A, 10V
  • Supply and Demand Status: Limited

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116+ $2.9919 $347.0604
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