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Same model may have multiple batches, images only for reference.
SIHF18N50D-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHF18N50D-E3

Part No SIHF18N50D-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 18A TO-220FP
Datasheet
SIHF18N50D-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 76nC @ 10V
Max Input Capacitance 1500pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 39W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 1096422-SIHF18N50D-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SIHF18N50D-E3 CAD Model

Description

The Vishay SIHF18N50D-E3 is a high-quality MOSFET designed for use in discrete semiconductor products.

  • Channel Polarity: N-Channel
  • Package: TO-220 Full Pack
  • Packaging: Tube/Rail
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 18A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 280 mOhm @ 9A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 76nC @ 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Estimated Lead Time: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.6753 $50.8307
46+ $2.1952 $100.9792
71+ $2.1266 $150.9886
98+ $2.0580 $201.6840
126+ $1.9894 $250.6644
169+ $1.7836 $301.4284
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Availability: 608 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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