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SIHFR120-GE3

Part No SIHFR120-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 100V / N-Channel 100 V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIHFR120-GE3DKR,742-SIHFR120-GE3CT,742-SIHFR120-GE3TR
Standard Package 3,000
Win Source Part Number 1014334-SIHFR120-GE3
Ultra Librarian 3D Model Ultra Librarian SIHFR120-GE3 CAD Model

Description

The Vishay Siliconix component with a part number of 1014334-SIHFR120-GE3 is a MOSFET (Metal Oxide) that falls under the category of Discrete Semiconductor Products.

  • Power Dissipation: 2.5W (Ta), 42W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
  • Voltage Range: ±20V
  • Operating Temperature: -55°C ~ 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3730 $50.3550
330+ $0.3061 $101.0130
510+ $0.2965 $151.2150
700+ $0.2870 $200.9000
905+ $0.2774 $251.0470
1,210+ $0.2487 $300.9270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 270 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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