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SIHG17N60D-GE3

Part No SIHG17N60D-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 17A TO247AC / Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 90nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1780pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 277.8W (Tc)
Rds On (Maximum) @ Id, Vgs 340 mOhm @ 8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AC
Package TO-247-3
Win Source Part Number 794396-SIHG17N60D-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SiHG17N60D
Introduction Date April 29, 2012
ECCN EAR99
Country of Origin China
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian SIHG17N60D-GE3 CAD Model

Description

The Vishay Siliconix SiHG17N60D-GE3 is a Vishay Siliconix through-hole mounted MOSFET.

  • Continuous Drain Current: 17A
  • Maximum Power Dissipation: 277.8W
  • Resistance: 340 mOhm @ 8A @ 10V
  • Drive Voltage: 10V
  • Gate Charge: 90nC @ 10V
  • Maximum Vgs: ±30V
  • Input Capacitance: 1780pF @ 100V
  • Supply and Demand: Limited

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