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SIHG22N50D-E3

Part No SIHG22N50D-E3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 500V 22A TO-247AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 230mOhm at 11A, 10V
Vgs(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 98nC at 10V
Maximum Vgs ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1938pF at 100V
Power Dissipation (Maximum) 312W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247AC
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 809989-SIHG22N50D-E3
Ultra Librarian 3D Model Ultra Librarian SIHG22N50D-E3 CAD Model

Description

The Vishay Siliconix SIHG22N50D-E3 is a high-performance MOSFET (Metal Oxide) component that is designed to deliver reliable performance in various electronic applications.

  • FET Type: N-Channel
  • Drain to Source Voltage: 500V
  • Supplier Device Package: TO-247AC
  • Power Dissipation (Maximum): 312W (Tc)
  • Manufacturer Package: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2831 $59.0958
43+ $2.6939 $115.8377
67+ $2.6098 $174.8566
92+ $2.5255 $232.3460
119+ $2.4414 $290.5266
159+ $2.1887 $348.0033
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,800 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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