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Same model may have multiple batches, images only for reference.
SIHG22N60AEL-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG22N60AEL-GE3

Part No SIHG22N60AEL-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG22N60AEL-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series EL
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1757 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG22
Other Names SIHG22N60AEL-GE3CT,SIHG22N60AEL-GE3DKR,SIHG22N60AEL-GE3TRINACTIVE,SIHG22N60AEL-GE3DKRINACTIVE,SIHG22N60AEL-GE3TR,SIHG22N60AEL-GE3CT,SIHG22N60AEL-GE3TR,SIHG22N60AEL-GE3DKR
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277703-SIHG22N60AEL-GE3
Ultra Librarian 3D Model Ultra Librarian SIHG22N60AEL-GE3 CAD Model

Description

The SIHG22N60AEL-GE3 is a N-Channel MOSFET transistor designed for use in discrete semiconductor products, specifically in transistors - FETs, MOSFETs - Single.

  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 21 A @ 25°C
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
  • Gate Charge: 82 nC @ 10 V
  • Input Capacitance: 1757 pF @ 100 Vds
  • Mounting Type: Through-Hole
  • Package: TO-247-3
  • Power Dissipation: 208W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Vishay Siliconix
  • Series: EL series

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