The Vishay Siliconix SIHG25N60EFL-GE3 is a MOSFET (Metal Oxide) transistor that is perfect for various applications.

• Packaging: Tube packaging
• Standard Package: Contains 500 components
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
• Power Dissipation (Max): 250W (Tc)
• Mounting Type: Through hole
• Package/Case: TO-247-3
• Supplier Device Package: TO-247AC
• Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
• Temperature Range for Operating: -55°C ~ 150°C (TJ)
• ECCN: EAR99
• HTSUS: 8541.29.0095