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Same model may have multiple batches, images only for reference.
SIHG32N50D-E3 Real Image
Same model may have multiple batches, images only for reference.

SIHG32N50D-E3

Part No SIHG32N50D-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHG32N50D-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 100 V
Power Dissipation (Max) 390W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number SIHG32
Standard Package 500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277888-SIHG32N50D-E3
Ultra Librarian 3D Model Ultra Librarian SIHG32N50D-E3 CAD Model

Description

The Vishay Siliconix SIHG32N50D-E3 is an N-channel MOSFET transistor with a maximum drain to source voltage of 500V and a continuous drain current rating of 30A (Tc).

  • Maximum On-Resistance: 150mOhm @ 16A, 10V
  • Gate Charge: 96 nC @ 10 V
  • Package: TO-247-3
  • Maximum Power Dissipation: 390W (Tc)
  • Use: Widely used in electronic circuits due to its high switching speed and low on-resistance

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