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Same model may have multiple batches, images only for reference.
SIHG32N50D-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHG32N50D-GE3

Part No SIHG32N50D-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description D Series Power MOSFET
Datasheet
SIHG32N50D-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 96nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2550pF @ 100V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 390W (Tc)
Rds On (Maximum) @ Id, Vgs 150 mOhm @ 16A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AC
Package TO-247-3
Win Source Part Number 1249910-SIHG32N50D-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Family Name SiHG32N50D
Introduction Date August 20, 2012
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian SIHG32N50D-GE3 CAD Model

Description

The Vishay SiHG32N50D-GE3 is a MOSFET technology component in the TO-247-3 package.

  • Manufacturer: Vishay
  • Technology: MOSFET
  • Package: TO-247-3
  • Current: 30A (Tc)
  • Voltage (Drain Source): 500V
  • Gate Charge: 96nC @ 10V
  • Power Dissipation: 390W (Tc)
  • Input Capacitance: 2550pF @ 100V
  • Maximum Rds On: 150 mOhm @ 16A, 10V
  • Family: SiHG32N50D
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Supply and Demand Status: Limited
  • Estimated EOL Date: 2026

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.9124 $53.2116
21+ $4.8512 $101.8752
32+ $4.6996 $150.3872
44+ $4.5480 $200.1120
57+ $4.3964 $250.5948
77+ $3.9416 $303.5032
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Availability: 1,932 pieces
MOQ: 9 pcs
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